Semiconductor package structure and method of manufacturing the same

ABSTRACT

A method of manufacturing a semiconductor package structure is provided. A stacked structure formed over the carrier substrate is provided, wherein the stacked structure has a channel with an opening. The stacked structure is immersed into a fluidic molding material to render the fluidic molding material flow into the channel through the openings.

This application claims priority of U.S. provisional application Ser.No. 62/427,664 filed on 29 Nov. 2016, which is incorporated by referencein its entirety.

BACKGROUND

In an attempt to further increase circuit density and reduce costs,three-dimensional (3D) semiconductor package structures have beendeveloped. In a semiconductor package structure, several dies arestacked and molding layers are formed to encapsulate the stacked dies.For a semiconductor package structure with a channel among the dies,however, void tends to occur in the channel in formation of the moldinglayer, and several molding operations are required.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the embodiments of the present disclosure are best understoodfrom the following detailed description when read with the accompanyingfigures. It is noted that, in accordance with the standard practice inthe industry, various structures are not drawn to scale. In fact, thedimensions of the various structures may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flow chart illustrating a method for manufacturing asemiconductor package structure according to various aspects of one ormore embodiments of the present disclosure.

FIG. 2 is a flow chart illustrating a method for manufacturing a channelstructure according to various aspects of one or more embodiments of thepresent disclosure.

FIG. 3A, FIG. 3B, FIG. 3C, FIG. 3D, FIG. 3E, FIG. 3F, FIG. 3G, FIG. 3Hand FIG. 3I are schematic views at one of various operations ofmanufacturing a semiconductor package structure according to one or moreembodiments of the present disclosure.

FIG. 4A, FIG. 4B, FIG. 4C and FIG. 4D are schematic views at one ofvarious operations of manufacturing a semiconductor package structureaccording to one or more embodiments of the present disclosure.

FIG. 5A, FIG. 5B, FIG. 5C and FIG. 5D are schematic views at one ofvarious operations of manufacturing a semiconductor package structureaccording to one or more embodiments of the present disclosure.

FIG. 6 is a schematic cross-sectional view of a semiconductor packagestructure according to one or more embodiments of the presentdisclosure.

FIG. 7 is a schematic cross-sectional view of a semiconductor packagestructure according to one or more embodiments of the presentdisclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of elements and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “lower”,“above”, “upper”, “on” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the terms such as “first” and “second” describe variouselements, components, regions, layers and/or sections, these elements,components, regions, layers and/or sections should not be limited bythese terms. These terms may be only used to distinguish one element,component, region, layer or section from another. The terms such as“first”, “second”, and “third” when used herein do not imply a sequenceor order unless clearly indicated by the context.

In one or more embodiments of the present disclosure, a method ofmanufacturing semiconductor package structure is provided. The methodincludes forming a molding layer in a channel by an immersion moldingoperation. The channel is narrow passage with small openings defined byseveral stacked dies. In the immersion molding operation, the channelhaving openings is gradually immersed in a fluidic molding material suchthat the fluidic molding material is steadily flowed into the channelthrough the openings. Meanwhile, residual air in the channel is carriedoff through the openings of the channel. Accordingly, formation of voidin the channel is alleviated. The fluidic molding material is then curedto form the molding layer. In some embodiments, the immersion moldingoperation is carried out in a reaction chamber being vacuumed such thatresidual air is carried off by vacuum.

In one or more embodiments of the present disclosure, a method ofmanufacturing a channel structure is provided. The method includesdisposing a channel structure having a channel with an opening into afluidic material to render the fluidic material flow into the channelthrough the opening. The channel is disposed in the fluidic material ata first depth such that a first portion of the opening is immersed intothe fluidic material, while a second portion of the opening is exposedfrom the fluidic material. Accordingly, residual air in the channel iscarried off through the second portion of the opening of the channel.The channel is then disposed in the fluidic material at a second depthsuch that the second portion of the opening is immersed into the fluidicmaterial to render the fluidic material flow into the channel. In one ormore embodiments, the channel structure is, but not limited to, aportion of a semiconductor package structure having a channel withopening(s).

In one or more embodiments of the present disclosure, a semiconductorpackage structure includes first dies spaced from each other, a moldinglayer between first dies, a second die over the first dies and themolding layer, and an adhesive layer between the first dies and thesecond die and between the molding layer and the second die. The moldinglayer includes a protrusion portion extending toward the second die or arecessed portion recessed away from the second die such that the moldinglayer is engaged with the adhesive layer, thereby enhancing adhesionbetween the molding layer and the adhesive layer.

FIG. 1 is a flow chart illustrating a method for manufacturing asemiconductor package structure according to various aspects of one ormore embodiments of the present disclosure. The method 100 begins withoperation 110 in which a stacked structure formed over a carriersubstrate is provided. The stacked structure comprises a plurality offirst dies over the carrier substrate and spaced from each other, and asecond die over the first dies, and the carrier substrate, the firstdies and the second die define a channel with an opening. The method 100proceeds with operation 120 in which the stacked structure is immersedinto a fluidic molding material to render the fluidic molding materialflow into the channel through the openings.

The method 100 is merely an example, and is not intended to limit thepresent disclosure beyond what is explicitly recited in the claims.Additional operations can be provided before, during, and after themethod 100, and some operations described can be replaced, eliminated,or moved around for additional embodiments of the method.

FIG. 2 is a flow chart illustrating a method for manufacturing a channelstructure according to various aspects of one or more embodiments of thepresent disclosure. The method 200 begins with operation 210 in which achannel structure having a channel with an opening is provided. Themethod 200 continues with operation 220 in which the channel is disposedin a fluidic material at a first depth. In operation 220, a firstportion of the opening is immersed into the fluidic material at thefirst depth to render the fluidic material flow into the channel throughthe first portion of the opening, and residual air in the channel isexhausted from a second portion of the opening. The method 200 proceedswith operation 230 in which the channel is disposed in the fluidicmaterial at a second depth. In operation 230, the second portion of theopening is further immersed into the fluidic material to render thefluidic material flow into the channel.

The method 200 is merely an example, and is not intended to limit thepresent disclosure beyond what is explicitly recited in the claims.Additional operations can be provided before, during, and after themethod 200, and some operations described can be replaced, eliminated,or moved around for additional embodiments of the method.

FIG. 3A, FIG. 3B, FIG. 3C, FIG. 3D, FIG. 3E, FIG. 3F, FIG. 3G, FIG. 3Hand FIG. 3I are schematic views at one of various operations ofmanufacturing a semiconductor package structure according to one or moreembodiments of the present disclosure, where FIG. 3A and FIG. 3B areperspective views, and FIG. 3C, FIG. 3D, FIG. 3E, FIG. 3F, FIG. 3G,FIGS. 3H and 3I are cross-sectional views. As depicted in FIG. 3A, acarrier substrate 10 is provided. The carrier substrate 10 is configuredas a carrier for carrying a channel structure having a channel withopening(s) during manufacturing, and is able to be handled by a carrierholder. In one or more embodiments, the channel structure is a part of astacked structure such as a semiconductor package structure. In one ormore embodiments, the carrier substrate 10 is, but not limited to, aglass carrier substrate. The carrier substrate 10 may be formed frominsulative material, semiconductive material, conductive material or anyother suitable material.

As depicted in FIGS. 3B and 3C, a stacked structure 20 formed over thecarrier substrate 10 is provided. The stacked structure 20 includes aplurality of first dies 24 and a second die 26. The first dies 24 aredisposed over the carrier substrate 10 and spaced from each other, and asecond die 26 disposed over the first dies 24. The carrier substrate 10,the first dies 24 and the second die 26 define a channel 22 with atleast two openings 22A. In one or more embodiments, the stackedstructure 20 includes several first dies 24 laterally disposed over thecarrier substrate 10 in a first direction L1. The channel 22 is an emptygap extending along a second direction L2 between adjacent first dies 24with openings 22A facing the second direction L2. In one or moreembodiments, two first dies 24 are arranged side by side over thecarrier substrate 10 in the first direction L1, and the channel 22 issubstantially a straight channel with two openings 22A. In someembodiments, two or more first dies 24 may be arranged in a differentmanner such that the channel 22 may have a different shape such asstraight channel with one opening, a T-shaped channel with threeopenings, a cross-shaped channel with four openings or channels withother shapes. In one or more embodiments, a first surface (e.g. a bottomsurface) 241 of the first die 24 is formed over the carrier substrate 10with an adhesive layer 12 such as a die attaching film (DAF). The firstdies 24 may be semiconductor dies or any other types of dies, packagestructures or interposers. In one or more embodiments, a second surface242 (e.g. an upper surface) of the first die 24 is a structural layer24A. The structural layer 24A may be an upmost layer of the first die24. By way of example, the structural layer 24A is, but not limited to,an upmost layer of a redistribution layer (RDL), an upmost passivationlayer or other insulative or conductive layer of the first die 24. Inone or more embodiments, the material of the structural layer 24A is apolymeric material such as polyimide (PI) or polybenzoxazole (PBO). Insome embodiments, the first dies 24 and the second die 26 areelectrically connected to each other. Conductors such as throughinsulator vias (TIVs) (not shown) are disposed over the structural layer24A of the first die 24 and arranged alongside the second die 26. Theconductors are configured to electrically connect the first die 24 to anelectronic structure such as a redistribution layer, a packagestructure, a circuit board or the like disposed over the second die 26.In some embodiments, the first die 24 is electrically connected to thesecond die 26 through the electronic structure.

The second die 26 is positioned over the laterally disposed first dies24. In one or more embodiments, a first surface (e.g. a bottom surface)261 of the second die 26 is formed over the second surfaces 242 of thefirst dies 24 with another adhesive layer 28 such as a die attachingfilm (DAF). The second die 26 also covers the channel 22 such that thecarrier substrate 10, the first dies 24 and the second die 26 define thechannel 22 with openings 22A. In one or more embodiments, the openings22A are defined by an inner sidewall 243 of each first die 24, the firstsurface 261 and a surface of the adhesive layer 12. In some embodiments,the openings 22A face the second direction L2 substantially orthogonalto the first direction L1, along which the first dies 24 are disposed.The second die 26 may be a semiconductor die or any other types of dieor package structure. The dimension of the first die 24 or the seconddie 26 may be arbitrarily increased or reduced. In some embodiments, thedimension of the second die 26 is larger than the dimension of the firstdie 24. In some alternative embodiments, the dimension of the second die26 is smaller than the dimension of the first die 24.

In one or more embodiments, a second surface 262 (e.g. an upper surface)of the second die 26 is a structural layer 26A. By way of example, thestructural layer 26A is, but not limited to, an upmost layer of aredistribution layer (RDL), an upmost passivation layer or otherinsulative layer of the second die 26. In one or more embodiments, thematerial of the structural layer 26A is a polymeric material such aspolyimide (PI) or polybenzoxazole (PBO). In one or more embodiments,conductors 27 such as conductive pillars or bonding pads are disposedproximal to the second surface 262 of the second die 26, and theconductors 27 are configured to electrically connect the second die 26to an electronic structure such as a redistribution layer, a packagestructure, a circuit board or the like. In some embodiments, the seconddie 26 is electrically connected to the first die 24 through theelectronic structure. In some embodiments, the conductors 27 are coveredby the upmost structural layer 26A.

As depicted in FIG. 3D, a fluidic material such as a fluidic moldingmaterial 30 is provided. In one or more embodiments, the fluidic moldingmaterial 30 is an insulative material in a fluidic form. By way ofexample, the insulative material is a polymeric material such as, butnot limited to, epoxy resin. In some embodiments, the fluidic moldingmaterial 30 includes fillers such as silicon oxide filler or aluminumoxide fillers containing in the fluid. The stacked structure 20 adheredto the carrier substrate 10 is turned over such that the stackedstructure 20 faces the fluidic molding material. In one or moreembodiments, the fluidic molding material 30 and the stacked structure20 are loaded in a reaction chamber 40. In one or more embodiments, thereaction chamber 40 is configured to provide a heated environment. Inone or more embodiments, the reaction chamber 40 is configured toprovide a vacuum environment.

As depicted in FIG. 3E, the stacked structure 20 is immersed into thefluidic molding material 30 to render the fluidic molding material 30flow into the channel 22 through the openings 22A. In one or moreembodiments, the fluidic molding material 30 flows into the channel 22due to hydrostatic behavior. In some embodiments, the dimension of theopening 22A is larger than the size of the filler of the fluidic moldingmaterial 30 such that the filler can fill the channel 22 through theopening 22A. In some embodiments, the ratio of the dimension of theopening 22A to the size of the filler is greater than 1.5, or greaterthan 2, or greater than 3, or even more. By way of example, the size(e.g. diameter) of the filler is about 20 micrometers, and the dimension(e.g. length or width) is about 50 micrometers. In one or moreembodiments, the channel 22 is positioned in the fluidic moldingmaterial 30 at a first depth D1 such that a first portion 22L of each ofthe openings 22A is immersed into the fluidic molding material 30, whilea second portion 22U of each of the openings 22A is not immersed intothe fluidic molding material 30. Accordingly, the fluidic moldingmaterial 30 is able to flow into the channel 22 through the firstportion 22L of the opening 22A, while residual air in the channel 22 isable to be exhausted from the second portion 22U of the opening 22A. Inone or more embodiments, the reaction chamber 40 is vacuumed duringimmersing the stacked structure 20 into the fluidic molding material 30such that the residual air in the channel 22 is able to be exhausted byvacuum 42. In one or more embodiments, the fluidic molding material 30is heated when immersing the stacked structure 20 into the moldingmaterial 30 to maintain fluidity of the fluidic molding material 30.

As depicted in FIG. 3F, the fluidic molding material 30 continues toflow into the channel 22 through the first portion 22L of the opening22A, while the residual air in the channel 22 is still being exhaustedfrom the second portion 22U of the opening 22A.

As depicted in FIG. 3G, the channel 22 is subsequently positioned in thefluidic molding material 30 at a second depth D2 such that the secondportion 22U of each of the openings 22A is further immersed into thefluidic molding material 30. As the residual air is exhausted from thereaction chamber 40, the fluidic molding material 30 is able to flowinto the channel 22 through the second portion 22U of the openings 22Auntil the channel 22 is filled up.

In one or more embodiments, the channel 22 is immersed into the fluidicmolding material 30 in a continuous manner at a substantially constantrate. By way of example, the channel 22 is lowered toward the fluidicmolding material 30 continuously at a proper lowering rate (or thefluidic molding material 30 is lifted toward the channel 22 continuouslyat a proper lifting rate) such that the fluidic molding material 30 hassufficient time flowing into the channel 22 through the first portion22L of the opening 22A, the residual air in the channel 22 is able to beexhausted from the second portion 22U of the opening 22A, and then thefluidic molding material 30 is able to fill the channel 22 through thesecond portion 22U of the openings 22A. In one or more embodiments, thechannel 22 is immersed into the fluidic molding material 30 in amulti-step manner. By way of example, the channel 22 is lowered towardthe fluidic molding material 30 at a first depth D1 and maintained atthe first depth D1 such that the fluidic molding material 30 hassufficient time flowing into the channel 22 through the first portion22L of the opening 22A, and the residual air in the channel 22 is ableto be exhausted from the second portion 22U of the opening 22A. Thechannel 22 is then lowered toward the fluidic molding material 30 at asecond depth D2 and maintained at the second depth D2 such that thefluidic molding material 30 is able to fill the channel 22 through thesecond portion 22U of the openings 22A.

As depicted in FIG. 3H, the fluidic molding material 30 may be thencured to form a molding layer 32 in the channel 22. As depicted in FIG.3I, a portion of the molding layer 32 is removed by e.g., grinding toexpose the conductors 27 electrically connected to the second die 26 andthe conductors (not shown) electrically connected to the first die (notshown). Accordingly, a semiconductor package structure 1 is formed. Inone or more embodiments, an electronic structure (not shown) such as aredistribution layer is formed over the second die 26 and electricallyconnected to the conductors 27. In one or more embodiments, the moldinglayer 32 further covers an edge 263 of the second die 26. In one or moreembodiments, the molding layer 32 further covers a portion of the secondsurface and an edge of the first die. In one or more embodiments, themolding layer 32 in the channel 22, covering the first dies (not shown)and the second die 26 is formed by one time immersion molding operation.Thus, manufacturing costs can be reduced. In one or more embodiments,the carrier substrate 10 is removed from the stacked structure 20 afterthe molding layer 32 is formed.

The semiconductor package structure of the present disclosure is notlimited to the above-mentioned embodiments, and may have other differentembodiments. To simplify the description and for the convenience ofcomparison between each of the embodiments of the present disclosure,the identical components in each of the following embodiments are markedwith identical numerals. For making it easier to compare the differencebetween the embodiments, the following description will detail thedissimilarities among different embodiments and the identical featureswill not be redundantly described.

FIG. 4A, FIG. 4B, FIG. 4C and FIG. 4D are schematic views at one ofvarious operations of manufacturing a semiconductor package structureaccording to one or more embodiments of the present disclosure. Asdepicted in FIG. 4A, a carrier substrate 10 is provided. A stackedstructure 20 is formed over the carrier substrate 10. The stackedstructure 20 has a channel 22 with at least one opening 22A. In one ormore embodiments, the stacked structure 20 includes several first dies24 disposed over the carrier substrate 10 and spaced from each otherwith the channel 22. In one or more embodiments, a first surface (e.g. abottom surface) 241 of the first die 24 is formed over the carriersubstrate 10 with an adhesive layer 12 such as a die attaching film(DAF). The first dies 24 may be semiconductor dies or any other types ofdies, package structures or interposers. The stacked structure 20further includes at least one second die 26 over a second surface (e.g.an upper surface) 242 of the first dies 24. In one or more embodiments,the second die 26 is formed over the first dies 24 with another adhesivelayer 28 such as a die attaching film (DAF). The second die 26 alsocovers the channel 22 such that the carrier substrate 10, the first dies24 and the second die 26 define the channel 22 with the at least twoopenings 22A. The second die 26 may be a semiconductor die or any othertypes of dies or package structures. In one or more embodiments, thesecond die 26 is in electrical communication with the first dies 24. Inone or more embodiments, conductors such as conductive bumps orconductive pillars are disposed between and electrically connected tothe second die 26 and the first die(s) 24.

In one or more embodiments, a fluidic molding material 30 is containedin a mold chase 34. In one or more embodiments, the mold chase 34 isequipped with heater to heat the fluidic molding material 30 to maintainfluidity of the fluidic molding material 30. In one or more embodiments,a release film 36 is formed on the mold chase 34 to help release themolding layer formed after molding. In one or more embodiments, thecarrier substrate 10 is fixed on a substrate holder 14. In one or moreembodiments, the substrate holder 14 is a chuck such as a vacuum chuck,an electrostatic chuck (E chuck) or any other suitable holder able tohandle and carry the carrier substrate 10. In one or more embodiments,the substrate holder 14 may be equipped with heater to heat the stackedstructure 20. The stacked structure 20 and the carrier substrate 10 areheld by the substrate holder 14 and suspended over the mold chase 34before immersing the channel 22 into the fluidic molding material 30. Inone or more embodiments, the immersion molding operation is performed ina reaction chamber 40 with vacuum function.

As depicted in FIG. 4B, the stacked structure 20 is immersed into thefluidic molding material 30 to render the fluidic molding material 30flow into the channel 22. In one or more embodiments, the stackedstructure 20 and the carrier substrate 10 held by the substrate holder14 are moved downward to immerse the channel 22 into the fluidic moldingmaterial 30. In one or more embodiments, the mold chase 34 is movedupward to immerse the channel 22 into the fluidic molding material 30.In one or more embodiments, immersion the stacked structure 20 into thefluidic molding material 30 is performed as the operations described inFIG. 3E, FIG. 3F and FIG. 3G, but not limited thereto. In one or moreembodiments, the heater in the substrate holder 14 is operated to heatthe stacked structure 20 during immersion. In one or more embodiments,the heater in the mold chase 34 is operated to heat the fluidic moldingmaterial 30 during immersion. In one or more embodiments, the reactionchamber 40 is vacuumed during immersion.

As depicted in FIG. 4C, the fluidic molding material 30 is then cured toform a molding layer 32 in the channel 22. As depicted in FIG. 4D, aportion of the molding layer 32 is removed by e.g., grinding to exposethe conductors 27 electrically connected to the second die 26 and theconductors (not shown) electrically connected to the first die 24.Accordingly, a semiconductor package structure 2 is formed. In one ormore embodiments, an electronic structure (not shown) such as aredistribution layer is formed over the second die 26 and electricallyconnected to the conductors 27. In one or more embodiments, the moldinglayer 32 further covers an edge 263 of the second die 26. In one or moreembodiments, the molding layer 32 further covers a portion of the secondsurface 242 and an outer sidewall 244 of the first die 24. In one ormore embodiments, the molding layer 32 in the channel 22, covering anouter sidewall 263 of the second die 26 and a portion of the secondsurface 242 and the outer sidewall 244 of the first die 24 is formed byone time immersion molding operation. Thus, manufacturing costs can bereduced. In one or more embodiments, the carrier substrate 10 is removedfrom the stacked structure 20 after the molding layer 32 is formed.

FIG. 5A, FIG. 5B, FIG. 5C and FIG. 5D are schematic views at one ofvarious operations of manufacturing a semiconductor package structure 3according to one or more embodiments of the present disclosure. Asdepicted in FIG. 5A, a stacked structure 20 formed over a carriersubstrate 10 is provided. In some embodiments, the stacked structure 20includes several first dies 24, a second die 26, several firstconductors 23 and several second conductors 25. The second die 26 ispositioned over the first dies 24, defining a channel 22 with at leastone opening 22A. The first conductors 23 are disposed over andelectrically connected to the first dies 24. In some embodiments, thefirst conductors 23 includes through insulator vias (TIVs) disposed overthe structural layer 24A of the first die 24 and arranged alongside thesecond die 26. In some embodiments, the first conductors 23 areelectrically connected to the first dies 24 through respective bondingpads 23P. The second conductors 25 are disposed over and electricallyconnected to the second die 26. In some embodiments, the secondconductors 25 such as conductive pillars or bonding pads are disposedproximal to the second surface 262 of the second die 26.

In some embodiments, a molding layer 32 is formed to fill the channel 22by an immersion molding operation as described in the foregoingembodiments. In some embodiments, the molding layer 32 further surroundsthe first dies 24, the second die 26, the first conductors 23 and thesecond conductors 25.

As depicted in FIG. 5B, a portion of the molding layer 32 and thestructural layer 26A are removed by, e.g. grinding to expose a portionof the first conductors 23 and a portion of the second conductors 25.

As depicted in FIG. 5C, a redistribution layer 38 is formed over themolding layer 32. In some embodiments, the first conductors 23 and thesecond conductors 25 are electrically connected to each other throughthe redistribution layer 38, and thus the first dies 24 and the seconddie 26 are in electrical communication with each other through the firstconductors 23, the redistribution layer 38 and the second conductors 25.In some embodiments, conductive pads 39 such as under bump metallurgies(UBMs) or the like are formed over and electrically connected to theredistribution layer 38.

As depicted in FIG. 5D, conductive structures 41 such as conductivebumps or the like are formed over and electrically connected to theconductive pads 39 to form a semiconductor package structure 3. In someembodiments, an electronic structure such as a package structure, acircuit board or the like can be formed over and electrically connectedto the redistribution layer 38 through the conductive structures 41 andthe conductive pads 39.

FIG. 6 is a schematic cross-sectional view of a semiconductor packagestructure 4 according to one or more embodiments of the presentdisclosure. As depicted in FIG. 6, the semiconductor package structure 3includes several first dies 24, a molding layer 32, a second die 26 andan adhesive layer 28. The first dies 24 are spaced from each other. Themolding layer 32 is disposed between the first dies 24. The second die26 is disposed over the first dies 24 and the molding layer 32. Theadhesive layer 28 is disposed between the first dies 24 and the seconddie 26, and between the molding layer 32 and the second die 26. In oneor more embodiments, an upmost layer of the first die 24 is a structurallayer 24A such as an upmost layer of a redistribution layer (RDL), anupmost passivation layer or other insulative or conductive layer of thefirst die 24. A first interface S1 is located between adhesive layer 28and the molding layer 32, and a second interface S2 is located betweenthe adhesive layer 28 and the first dies 24. In one or more embodiments,the second interface S2 is located between the adhesive layer 28 and thestructure layer 24A of the first dies 24.

In one or more embodiments, the molding layer 32 is formed subsequent toformation of the first dies 24 and the second die 26, and thus the firstinterface S1 and the second interface S2 are located at different levelsdue to different material characteristics between the molding layer 32and the adhesive layer 28. In one or more embodiments, the adhesivelayer 28 is softer than the molding layer 32, and therefore the moldinglayer 32 includes a protrusion portion 32A extending toward the seconddie 26. Accordingly, the first interface S1 is closer to the second die26 than the second interface S2.

FIG. 7 is a schematic cross-sectional view of a semiconductor packagestructure 5 according to one or more embodiments of the presentdisclosure. As depicted in FIG. 7, different from the semiconductorpackage structure 4 in FIG. 6, the molding layer 32 is softer than theadhesive layer 28, and therefore the molding layer 32 includes arecessed portion 32B recessed away from the second die 26. Accordingly,the first interface S1 is farther to the second die 26 than the secondinterface S2.

In one or more embodiments of the present disclosure, the molding layerof the semiconductor package structure is formed by an immersion moldingoperation. The immersion molding operation is configured to reduceoccurrence of void in the channel structure of the semiconductor packagestructure. The method is able to form a molding layer in a channel andencapsulating the stacked dies of the semiconductor package structure byone immersion molding operation, and thus manufacturing costs arereduced.

In one exemplary aspect, a method of manufacturing a semiconductorpackage structure is provided. A stacked structure formed over a carriersubstrate is provided. The stacked structure comprises a plurality offirst dies over the carrier substrate and spaced from each other, and asecond die over the first dies, and the carrier substrate, the firstdies and the second die define a channel with an opening. The stackedstructure is immersed into a fluidic molding material to render thefluidic molding material flow into the channel through the openings.

In another aspect, a semiconductor package structure includes aplurality of first dies, a molding layer, a second die and an adhesivelayer. The first dies are spaced from each other. The molding layer isbetween the first dies. The second die is over the plurality of firstdies and the molding layer. The adhesive layer is between the pluralityof first dies and the second die, and between the molding layer and thesecond die. A first interface is between adhesive layer and the moldinglayer and a second interface is between the adhesive layer and the firstdies are at different levels.

In yet another aspect, a semiconductor package structure includes aplurality of first dies, a second die, a molding layer, a plurality offirst conductors, a plurality of second conductors and a redistributionlayer. The first dies are spaced from each other. The second die is overthe plurality of first dies. The first die and the second die define achannel with an opening. The molding layer surrounds the first dies andthe second die, and in the channel. The first conductors are in themolding layer, and over and electrically connected to the first dies.The second conductors are in the molding layer, and over andelectrically connected to the second die. The redistribution layer isover the molding layer, wherein the first conductors and the secondconductors are electrically connected to each other through theredistribution layer.

The foregoing outlines structures of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of manufacturing a semiconductor packagestructure, comprising: providing a stacked structure formed over acarrier substrate, wherein the stacked structure comprises a pluralityof first dies over the carrier substrate and spaced from each other, anda second die over the plurality of first dies, and the carriersubstrate, the plurality of first dies and the second die defining achannel with an opening; and immersing the plurality of first dies andthe second die of the stacked structure into a fluidic molding materialto render the fluidic molding material flow into the channel through theopening, wherein the second die of the stacked structure is immersedinto the fluidic molding material prior to the plurality of first diesare immersed into the fluidic molding material, wherein immersing thestacked structure into the fluidic molding material is performed in areaction chamber, and the method further comprises vacuuming thereaction chamber during immersing the stacked structure into the fluidicmolding material.
 2. The method of claim 1, wherein the plurality offirst dies are laterally disposed over the carrier substrate in a firstdirection, and the opening of the channel faces a second direction. 3.The method of claim 1, wherein the stacked structure is immersed intothe fluidic molding material at a substantially constant rate.
 4. Themethod of claim 1, further comprising heating the fluidic moldingmaterial when immersing the stacked structure into the fluidic moldingmaterial to maintain fluidity of the fluidic molding material.
 5. Themethod of claim 1, further comprising suspending the stacked structureand the carrier substrate over a mold chase containing the fluidicmolding material.
 6. The method of claim 5, further comprising movingthe stacked structure downward to immerse the channel into the fluidicmolding material.
 7. The method of claim 5, further comprising movingthe mold chase upward to immerse the channel into the fluidic moldingmaterial.
 8. The method of claim 1, further comprising curing thefluidic molding material to form a molding layer in the channel.
 9. Themethod of claim 8, further comprising removing the carrier substratefrom the stacked structure after the molding layer is formed.
 10. Themethod of claim 1, wherein the fluidic molding material includes atleast one filler, and a dimension of the opening of the channel islarger than a size of the filler of the fluidic molding material.
 11. Amethod of manufacturing a semiconductor package structure, comprising:providing a stacked structure having a channel with an opening;disposing the channel in a fluidic material at a first depth, wherein afirst portion of the opening is immersed into the fluidic material atthe first depth to render the fluidic material flow into the channelthrough the first portion of the opening, and residual air in thechannel is exhausted from a second portion of the opening; and disposingthe channel in the fluidic material at a second depth, wherein thesecond portion of the opening is further immersed into the fluidicmaterial to render the fluidic material flow into the channel, whereinimmersing the stacked structure into the fluidic molding material isperformed in a reaction chamber, and the method further comprisesvacuuming the reaction chamber during immersing the stacked structureinto the fluidic molding material.
 12. The method of claim 11, whereindisposing the channel in the fluidic material is performed in a heatedenvironment to maintain fluidity of the fluidic material.
 13. The methodof claim 11, further comprising curing the fluidic material.
 14. Themethod of claim 11, wherein the channel is immersed into the fluidicmolding material in a continuous manner.
 15. The method of claim 11,wherein the channel is immersed into the fluidic molding material in amulti-step manner.
 16. A method of manufacturing a semiconductor packagestructure, comprising: providing a stacked structure, wherein thestacked structure comprises a plurality of first dies spaced from eachother, and a second die over the plurality of first dies, and theplurality of first dies and the second die define a channel with two ormore openings; disposing the stacked structure in a reaction chamber;and immersing the plurality of first dies and the second die of thestacked structure into a fluidic molding material in the reactionchamber, wherein the method further comprises vacuuming the reactionchamber during immersing the stacked structure into the fluidic moldingmaterial to render the fluidic molding material flow into the channelthrough the openings, wherein the second die of the stacked structure isimmersed into the fluidic molding material prior to the plurality offirst dies are immersed into the fluidic molding material.
 17. Themethod of claim 16, further comprising heating the fluidic moldingmaterial when immersing the stacked structure into the fluidic moldingmaterial to maintain fluidity of the fluidic molding material.
 18. Themethod of claim 16, wherein the fluidic molding material includes atleast one filler, and a dimension of the opening of the channel islarger than a size of the filler of the fluidic molding material.